article.page.titleprefix
Optical characterization of (TlInS2)0.5(TlInSe2)0.5 crystal by ellipsometry: Linear and optical constants for optoelectronic devices

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dc.contributor.authorGüler, İpek
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, Nizami Mamed
dc.date.accessioned2023-12-05T19:57:09Z
dc.date.available2023-12-05T19:57:09Z
dc.date.issued2023-06
dc.descriptionPublished by Journal of Materials Science: Materials in Electronics, https://doi.org/10.1007/s10854-023-10755-6, I. Guler, Physics, Inter-Curricular Courses Department, Çankaya University, 06530 Ankara, Turkey, M. Isik, Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey, N.M. Gasanly, Department of Physics, Middle East Technical University, 06800, Ankara, Turkey, Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan.
dc.description.abstractTlInSSe [(TlInS2)0.5(TlInSe2)0.5] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25-6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 eV and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.
dc.identifier.citationhttp://hdl.handle.net/20.500.14411/1818
dc.identifier.issn1573-482X
dc.identifier.urihttps://doi.org/10.1007/s10854-023-10755-6
dc.language.isoen
dc.publisherJournal of Materials Science: Materials in Electronics
dc.relation.ispartofseries34
dc.subjectSingle crystal; ellipsometry; optical constants; bandgap energy
dc.titleOptical characterization of (TlInS2)0.5(TlInSe2)0.5 crystal by ellipsometry: Linear and optical constants for optoelectronic devices
dc.typeArticle
dspace.entity.typeArticle

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