article.page.titleprefix
Nanowire geometry effects on devices and transport mechanisms: SnS2/SiNW heterojunction

Simple item page
dc.contributor.authorCoskun, Emre
dc.contributor.authorEmir, Cansu
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2023-12-28T07:42:29Z
dc.date.available2023-12-28T07:42:29Z
dc.date.issued2023-10-04
dc.descriptionOpen Access; Published by Journal of Materials Science; https://doi.org/10.1007/s10853-023-08891-9; Emre Coskun, Department of Physics, Canakkale Onsekiz Mart University, Canakkale, Turkey, The Center for Solar Energy Research and Applications (GÜNAM), Middle East Technical University, Ankara, Turkey ; Cansu Emir, Physics Group, Atilim University, Ankara, Turkey; Makbule Terlemezoglu, Department of Physics, Gazi University, Ankara, Turkey; Mehmet Parlak, Department of Physics, Middle East Technical University, Ankara, Turkey.
dc.description.abstractThe semiconductor nanowire technology has become essential in developing more complex and efficient devices. In this study, the Si nanowire (SiNW) heterojunction structure with a two-dimensional SnS2 thin film was investigated. The SiNW array was created by the metal-assisted etching method because of length control and production over large areas of nanowires. The created SiNW has more diminishing reflectivity compared with Si planar substrate. The diode characteristics of SnS2/SiNW and SnS2/Si planar heterojunctions were investigated by dark current analysis at room temperature, and the improving diode characteristics by the three-dimensional interface between SiNW and SnS2 thin film were discussed. Transport mechanisms of the SiNW heterojunction were also studied for various methods. Thermionic emission and thermally assisted tunneling models are the dominant mechanisms for low voltages (0.02–0.20 V), and the space charge limiting current mechanism dominates the current for comparingly high voltages (0.20–0.40 V). All the values reveal the significant impact of the SiNW on heterojunctions for improving efficiency.
dc.identifier.citationhttp://hdl.handle.net/20.500.14411/1946
dc.identifier.issn1573-4803
dc.identifier.urihttps://doi.org/10.1007/s10853-023-08891-9
dc.language.isoen
dc.publisherJournal of Materials Science
dc.relation.ispartofseries58
dc.titleNanowire geometry effects on devices and transport mechanisms: SnS2/SiNW heterojunction
dc.typeArticle
dspace.entity.typeArticle

Files

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Nanowire geometry effects on devicesmanuscript_revised_17.07.2023_Cansu Emir.docx
Size:
1.84 MB
Format:
Microsoft Word XML
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download

Collections

Physics Group