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Structural and Optical Properties of Interfacial InSe Thin Film

Abstract

This study presents a comprehensive investigation of the optical and structural characteristics of the indium selenide (InSe) film prepared on a glass substrate. The structural characteristics of the InSe film were analyzed using characterization techniques including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy while the UV–vis spectrophotometry method was used in the spectral range between 500 and 1000 nm to examine the optical characteristics. Thus, the UV–vis spectroscopic data were used to extract several optical parameters including extinction coefficient (k), optical band gap (Eg), refractive index (n), absorption coefficient (α), and optical conductivity (σopt). The optical transition of InSe was found as a direct transition. However, the optical analysis of this study has revealed that the InSe film has the potential to be used in various optoelectronic and photovoltaic applications.

Description

Open Access; Published by ACS Omega; https://doi.org/10.1021/acsomega.3c06600; Cansu Emir, Graduate School of Natural and Applied Sciences, Gazi University, Ankara 06830, Turkey, Physics Group, Atilim University, Ankara 06830, Turkey; Adem Tataroglu, Department of Physics, Gazi University, Ankara 06830, Turkey; Emre Coşkun, Department of Physics, Canakkale Onsekiz Mart University, Canakkale 17100, Turkey, Department of Physics, Middle East Technical University, Ankara 06830, Turkey; Sema Bilge Ocak, Graduate School of Natural and Applied Sciences, Gazi University, Ankara 06830, Turkey; https://orcid.org/0000-0002-0590-7555.

Keywords

Indium selenide (InSe) film, 2D materials, Structural characterization, UV-Vis spectroscopy, Optical parameters

Citation

https://hdl.handle.net/20.500.14411/2019

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