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A study on the dark and illuminated operation of Al/Si3N4/p‑Si Schottky photodiodes: optoelectronic insights

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dc.contributor.authorSürücü, Özge
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorYıldırım, Murat
dc.date.accessioned2024-02-19T08:16:00Z
dc.date.available2024-02-19T08:16:00Z
dc.date.issued2024-01-28
dc.descriptionOpen Access; Published by Applied Physics A; https://doi.org/10.1007/s00339-024-07284-2; Ozge Surucu, Murat Yıldırım, Department of Electrical and Electronics Engineering, Atilim University, 06836, Ankara, Turkey; Dilber Esra Yıldız, Murat Yıldırım, Department of Physics, Faculty of Arts and Sciences, Hitit University, 19030, Corum, Turkey; Murat Yıldırım, Department of Biotechnology, Faculty of Science, Selcuk University, 42130, Konya, Turkey.
dc.description.abstractThis work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal–organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of cur- rent–voltage (I–V), current–time (I–t), capacitance–time (C–t), and conductance time (G–t). The photodiode’s rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (Rs) and shunt resistance (Rsh). Rs values are calculated using Cheung’s functions, revealing the diode’s resistance behavior. The study also examines the photodiode’s photoconductivity and photoconductance, finding a non-linear relation- ship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device’s light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, reveal- ing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode’s behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.
dc.identifier.citationhttp://hdl.handle.net/20.500.14411/1994
dc.identifier.issn1432-0630
dc.identifier.urihttps://doi.org/10.1007/s00339-024-07284-2
dc.language.isoen
dc.publisherApplied Physics A
dc.relation.ispartofseries130
dc.subjectPhotodiode · Schottky diode · Electrical characterization · Si3N4 · Si · MIS
dc.titleA study on the dark and illuminated operation of Al/Si3N4/p‑Si Schottky photodiodes: optoelectronic insights
dc.typeArticle
dspace.entity.typeArticle

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