Revealing Defect Centers in PbWO4 Single Crystals Using Thermally Stimulated Current Measurements


The trap centers have a significant impact on the electronic properties of lead tungstate (PbWO4), suggesting their crucial role in optoelectronic applications. In the present study, we investigated and revealed the presence of shallow trap centers in PbWO4 crystals through the utilization of the thermally stimulated current (TSC) method. TSC experiments were performed in the 10–280 K range by applying a constant heating rate. The TSC spectrum showed the presence of a total of four peaks, two of which were overlapped. As a result of analyzing the TSC spectrum using the curve fit method, the activation energies of revealed centers were found as 0.03, 0.11, 0.16, and 0.35 eV. The trapping centers were associated with hole centers according to the comparison of TSC peak intensities recorded by illuminating the opposite polarity contacts. Our findings not only contribute to the fundamental understanding of the charge transport mechanisms in PbWO4 crystals but also hold great promise for enhancing their optoelectronic device performance. The identification and characterization of these shallow trap centers provide valuable insights for optimizing the design and fabrication of future optoelectronic devices based on PbWO4.


Open Access; Published by Journal of Applied Physics;; M. Isik, Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey, N.M. Gasanly, Department of Physics, Middle East Technical University, 06800, Ankara, Turkey, Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan


PbWO4, PbMoO4, defects, optoelectronic applications, thermally stimulated current, thermoluminescence