article.page.titleprefix
Revealing Defect Centers in PbWO4 Single Crystals Using Thermally Stimulated Current Measurements

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dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, Nizami Mamed
dc.date.accessioned2024-05-28T12:18:24Z
dc.date.available2024-05-28T12:18:24Z
dc.date.issued2024-02-28
dc.descriptionOpen Access; Published by Journal of Applied Physics; https://doi.org/10.1063/5.0189036; M. Isik, Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey https://orcid.org/0000-0003-2119-8266, N.M. Gasanly, Department of Physics, Middle East Technical University, 06800, Ankara, Turkey, Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan https://orcid.org/0000-0002-3199-6686.
dc.description.abstractThe trap centers have a significant impact on the electronic properties of lead tungstate (PbWO4), suggesting their crucial role in optoelectronic applications. In the present study, we investigated and revealed the presence of shallow trap centers in PbWO4 crystals through the utilization of the thermally stimulated current (TSC) method. TSC experiments were performed in the 10–280 K range by applying a constant heating rate. The TSC spectrum showed the presence of a total of four peaks, two of which were overlapped. As a result of analyzing the TSC spectrum using the curve fit method, the activation energies of revealed centers were found as 0.03, 0.11, 0.16, and 0.35 eV. The trapping centers were associated with hole centers according to the comparison of TSC peak intensities recorded by illuminating the opposite polarity contacts. Our findings not only contribute to the fundamental understanding of the charge transport mechanisms in PbWO4 crystals but also hold great promise for enhancing their optoelectronic device performance. The identification and characterization of these shallow trap centers provide valuable insights for optimizing the design and fabrication of future optoelectronic devices based on PbWO4.
dc.identifier.citationhttps://hdl.handle.net/20.500.14411/2040
dc.identifier.issn1089-7550
dc.identifier.urihttps://doi.org/10.1063/5.0189036
dc.language.isoen
dc.publisherJournal of Applied Physics
dc.relation.ispartofseries135
dc.subjectPbWO4
dc.subjectPbMoO4
dc.subjectdefects
dc.subjectoptoelectronic applications
dc.subjectthermally stimulated current
dc.subjectthermoluminescence
dc.titleRevealing Defect Centers in PbWO4 Single Crystals Using Thermally Stimulated Current Measurements
dc.typeArticle
dspace.entity.typeArticle

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